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IRGS4615DPBF Power MOSFET

IRGS4615DPBF Description

IRGS4615DPbF IRGB4615DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 15A, TC = 100°C tsc > 5µs, Tjmax = 175.

IRGS4615DPBF Applications

* Appliance Drives
* Inverters

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