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IRGIB6B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR

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Description

PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

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Features

* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient.
* Lead-Free. C VCES = 600V IC =

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IRGIB6B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
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