IRGIB10B60KD1PBF INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

IRGIB10B60KD1PBF Description

www.DataSheet.co.kr PD - 94913 IRGIB10B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

IRGIB10B60KD1PBF Features

* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient.
* Maximum Junction Temperature R

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Datasheet Details

Part number: IRGIB10B60KD1PBF
Manufacturer: International Rectifier
File Size: 511.05 KB
Datasheet: IRGIB10B60KD1PBF_InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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