IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

📥 Download Datasheet

IRGIB10B60KD1P Datasheet Preview — Preview of IRGIB10B60KD1P PDF

Datasheet Specifications

Part number: IRGIB10B60KD1P
Manufacturer: International Rectifier
File Size: 394.00 KB
Datasheet: IRGIB10B60KD1P-InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10μs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient.
* Maximum Junction Temperature R

IRGIB10B60KD1P Distributors

📁 Related Datasheet

IRGIB4620DPbF IRGIB4630DPbF IRG4BC20F IRG4BC20FD IRG4BC20FD-S IRG4BC20K

📌 All Tags

IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRGIB10B60KD1P-like datasheet