IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

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Datasheet Specifications

Part number: IRGIB6B60KD
Manufacturer: International Rectifier
File Size: 299.48 KB
Datasheet: IRGIB6B60KD_InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient. G E C VCES = 600V IC = 6.0A, TC=90°C ts

IRGIB6B60KD Distributors

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IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRGIB6B60KD-like datasheet