IRGB6B60KDPBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRGB6B60KDPBF
Manufacturer	International Rectifier ↗
File Size	349.15 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB6B60KDPBF_InternationalRectifier.pdf

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
TO-220 is available in PbF as a Lead-Free G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.8V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
E.

📁 IRGB6B60KDPBF Similar Datasheet

Other Datasheets by International Rectifier

Published: Aug 17, 2007 |