IRGB10B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

PD - 94925A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF VCES = 600V IC = 12.

📥 Download Datasheet

IRGB10B60KDPBF Datasheet Preview — Preview of IRGB10B60KDPBF PDF

Datasheet Specifications

Part number: IRGB10B60KDPBF
Manufacturer: International Rectifier
File Size: 391.96 KB
Datasheet: IRGB10B60KDPBF_InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient.
* Lead-Free G E tsc > 10µs, TJ

IRGB10B60KDPBF Distributors

📁 Related Datasheet

IRGB4620DPbF IRGB4630DPbF IRGB4640DPbF IRG4BC20F IRG4BC20FD IRG4BC20FD-S

📌 All Tags

IRGB10B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRGB10B60KDPBF-like datasheet