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IRGB10B60KDPBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

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Datasheet Details

Part number	IRGB10B60KDPBF
Manufacturer	International Rectifier ↗
File Size	391.96 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB10B60KDPBF_InternationalRectifier.pdf

IRGB10B60KDPBF Product details

Features

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Lead-Free G E tsc > 10µs, TJ=150°C n-channel Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. VCE(.

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Published: Jul 4, 2007 |