IRGB15B60KDPbF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRGB15B60KDPbF
Manufacturer	International Rectifier ↗
File Size	824.04 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB15B60KDPbF_InternationalRectifier.pdf

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Lead-Free C IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF VCES = 600V IC = 15A, TC=100°C G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.8V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Tran.

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Published: May 30, 2007 |