IRGB6B60K INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

www.DataSheet4U.com PD - 94575A INSULATED GATE BIPOLAR TRANSISTOR .

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IRGB6B60K Datasheet Preview — Preview of IRGB6B60K PDF

Datasheet Specifications

Part number: IRGB6B60K
Manufacturer: International Rectifier
File Size: 285.73 KB
Datasheet: IRGB6B60K_InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (on) Non Punch Through IGBT Technology.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Positive VCE (on) Temperature Coefficient. C IRGB6B60K IRGS6B60K IRGSL6B60K VCES = 600V IC = 7.0A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits
* Benchmark E

IRGB6B60K Distributors

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IRGB6B60K INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRGB6B60K-like datasheet