IRGB6B60KD INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

www.DataSheet4U.com PD - 94381E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB6B60KD IRGS6B60KD IRGSL6B60KD VCES = 600.

📥 Download Datasheet

IRGB6B60KD Datasheet Preview — Preview of IRGB6B60KD PDF

Datasheet Specifications

Part number: IRGB6B60KD
Manufacturer: International Rectifier
File Size: 349.29 KB
Datasheet: IRGB6B60KD_InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits

IRGB6B60KD Distributors

📁 Related Datasheet

IRGB4620DPbF IRGB4630DPbF IRGB4640DPbF IRG4BC20F IRG4BC20FD IRG4BC20FD-S

📌 All Tags

IRGB6B60KD INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRGB6B60KD-like datasheet