Datasheet Specifications
- Part number
- IRG8P40N120KDPbF
- Manufacturer
- International Rectifier
- File Size
- 530.47 KB
- Datasheet
- IRG8P40N120KDPbF-InternationalRectifier.pdf
- Description
- INSULATED GATE BIPOLAR TRANSISTOR
Description
VCES = 1200V IC = 40A, TC =100°C IRG8P40N120KDPbF IRG8P40N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC.
Features
* Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant G E n-channel E GC GCE IRG8P40N120KDPbF IRG8P40N120KD‐EPbF TO‐247AC TO‐247AD G Gate C Collector E Emitter Benefits High Efficiency in a MotApplications
* Industrial Motor DriveIRG8P40N120KDPbF Distributors
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