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IRG8P08N120KD-EPbF, IRG8B08N120KDPbF INSULATED GATE BIPOLAR TRANSISTOR

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Description

  IRG8B08N120KDPbF IRG8P08N120KDPbF IRG8P08N120KD-EPbF VCES = 1200V IC = 8A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recover.

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This datasheet PDF includes multiple part numbers: IRG8P08N120KD-EPbF, IRG8B08N120KDPbF. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IRG8P08N120KD-EPbF, IRG8B08N120KDPbF
Manufacturer
International Rectifier
File Size
625.52 KB
Datasheet
IRG8B08N120KDPbF-InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: IRG8P08N120KD-EPbF, IRG8B08N120KDPbF.
Please refer to the document for exact specifications by model.

Features

* Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant G E n-channel GCE TO-220AB IRG8B08N120KDPbF GCE TO-247AC IRG8P08N120KDPbF GC E TO-247AD IRG8P08N120KD-EPbF G Gate C Collector E Emitter Benefits 

Applications

* Industrial Motor Drive
* UPS
* Solar Inverters

IRG8P08N120KD-EPbF Distributors

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