Datasheet Specifications
- Part number
- IRG8P15N120KDPbF
- Manufacturer
- International Rectifier
- File Size
- 611.55 KB
- Datasheet
- IRG8P15N120KDPbF-InternationalRectifier.pdf
- Description
- INSULATED GATE BIPOLAR TRANSISTOR
Description
IRG8P15N120KDPbF IRG8P15N120KD-EPbF VCES = 1200V IC = 15A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tS.
Features
* Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant G E n-channel E GC E GC IRG8P15N120KDPbF IRG8P15N120KD‐EPbF TO‐247AC TO‐247AD G Gate C Collector E Emitter Benefits High Efficiency in a MoApplications
* Industrial Motor DriveIRG8P15N120KDPbF Distributors
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