IRG8P40N120KD-EPbF, IRG8P40N120KDPbF INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

VCES = 1200V IC = 40A, TC =100°C IRG8P40N120KDPbF IRG8P40N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC.

📥 Download Datasheet

IRG8P40N120KD-EPbF Datasheet Preview — This datasheet PDF includes multiple part numbers: IRG8P40N120KD-EPbF, IRG8P40N120KDPbF. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IRG8P40N120KD-EPbF, IRG8P40N120KDPbF
Manufacturer: International Rectifier
File Size: 530.47 KB
Datasheet: IRG8P40N120KDPbF-InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: IRG8P40N120KD-EPbF, IRG8P40N120KDPbF.
Please refer to the document for exact specifications by model.

Features

* Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant G E n-channel E GC GCE IRG8P40N120KDPbF IRG8P40N120KD‐EPbF TO‐247AC TO‐247AD G Gate C Collector E Emitter Benefits High Efficiency in a Mot

Applications

* Industrial Motor Drive
* UPS
* Solar Inverters

IRG8P40N120KD-EPbF Distributors

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IRG8P40N120KDPbF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRG8P40N120KD-EPbF-like datasheet