IRG7PH42UD-EP - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRG7PH42UD-EP
Manufacturer	International Rectifier ↗
File Size	466.46 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PH42UD-EP_InternationalRectifier.pdf

Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-Free IRG7PH42UDPbF IRG7PH42UD-EP C VCES = 1200V IC = 45A, TC = 100°C G E TJ(max) = 150°C Benefits.
High efficiency in a wide range of.

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Published: Apr 25, 2011 |