Description
INSULATED GATE BIPOLAR TRANSISTOR .
Features
* Low VCE (ON) trench IGBT technology
* Low switching losses
* Maximum junction temperature 175 °C
* Square RBSOA
* 100% of the parts tested for ILM
* Positive VCE (ON) temperature co-efficient
* Tight parameter distribution
* Lead -Fre
Applications
* Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses
* Rugged transient performance for increased reliability
* Excellent current sharing in parallel operation
Applications
* U. P. S
* Welding
* Solar inverter