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IRG7PH42U-EP - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

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Datasheet Details

Part number	IRG7PH42U-EP
Manufacturer	International Rectifier ↗
File Size	293.06 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PH42U-EP_InternationalRectifier.pdf

IRG7PH42U-EP Product details

Features

Low VCE (ON) trench IGBT technology.
Low switching losses.
Maximum junction temperature 175 °C.
Square RBSOA.
100% of the parts tested for ILM.
Positive VCE (ON) temperature co-efficient.
Tight parameter distribution.
Lead -Free Benefits.
High efficiency in a wide range of.

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Published: Apr 25, 2011 |