IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

INSULATED GATE BIPOLAR TRANSISTOR .

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Datasheet Specifications

Part number: IRG7PH42U-EP
Manufacturer: International Rectifier
File Size: 293.06 KB
Datasheet: IRG7PH42U-EP_InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (ON) trench IGBT technology
* Low switching losses
* Maximum junction temperature 175 °C
* Square RBSOA
* 100% of the parts tested for ILM
* Positive VCE (ON) temperature co-efficient
* Tight parameter distribution
* Lead -Fre

Applications

* Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
* Rugged transient performance for increased reliability
* Excellent current sharing in parallel operation Applications
* U. P. S
* Welding
* Solar inverter

IRG7PH42U-EP Distributors

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IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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