IRF7807ZPBF Datasheet - International Rectifier

IRF7807ZPBF Power MOSFET

PD - 95211B Applications l Control FET for Notebook Processor Power l Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free IRF7807ZPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg(typ.) :30V 13.8m @VGS = 10V 7.2nC S1 S2 S3 G4 AA 8D 7D 6D 5D Top View SO-8 Absolute Maximum Ratings P.

IRF7807ZPBF Features

* ached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows

IRF7807ZPBF Datasheet (211.74 KB)