IRF7807A - N-Channel Power MOSFET

International Rectifier

Datasheet Details

Part number	IRF7807A
Manufacturer	International Rectifier ↗
File Size	239.99 KB
Description	N-Channel Power MOSFET
Datasheet	IRF7807A_InternationalRectifier.pdf

These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.

IRF7807 IRF7807A Vds 30V 30V Rds(on) 25mΩ 25mΩ Qg 17nC 17nC Qsw 5.2nC Qoss 16.8nC 16.8nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Dissipation 25°C 70°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed source Current TJ, TSTG IS ISM 2.5 66 25°C 70°C IDM PD Symbol VDS VGS ID 8.3 6.6 66 2.5 1.6.
55 to 150 2.5 66 °C A IRF7807 30 ±12 8.3 6.6 66 W A.

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Published: Apr 16, 2005 |