IRF7807A Datasheet (International Rectifier)

IRF7807A, N-Channel Power MOSFET

These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.

The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors.

A pair o

IRF7807A Features

* IRF7807 IRF7807A Vds 30V 30V Rds(on) 25mΩ 25mΩ Qg 17nC 17nC Qsw 5.2nC Qoss 16.8nC 16.8nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Dissipation 25°C 70°C Junction & Storage Temperature Range