IRF7807D1 - MOSFET

International Rectifier

IRF7807D1 Datasheet Preview — Preview of IRF7807D1 PDF

Datasheet Details

Part number	IRF7807D1
Manufacturer	International Rectifier ↗
File Size	165.81 KB
Description	MOSFET
Datasheet	IRF7807D1_InternationalRectifier.pdf

IRF7807D1 Product details

Description

The FETKY™ family of Co-Pack HEXFET®MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications.

Features

(Max Values) IRF7807D1 VDS RDS(on) Qg Qsw Qoss 30V 25mΩ 14nC 5.2nC 18.4nC Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-Ambient.
RθJA Max. 50 Units °C/W www. irf. com 1 11/8/99 IRF7807D1 Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage.
Static Drain-Source on Resistance.
Drain-Source Leakage Current.
V(BR)DSS RDS(on) 1.0 90 7.2 Min 30 Typ Max Units V Conditions VGS = 0V, ID = 250µA VGS = 4.5V, ID = 7A VDS.

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Published: Apr 16, 2005 |