RDS(ON) ＜ 9.4mΩ (VGS = 10V)
S
S
S
G
1 2 3 4
SOP-8
AA 8D 7D 6D 5D
+0.040.21 -0.02
MOSFET
1.50 0.15
1 Source 2 Source 3 Source 4 Gate
5 Drain 6 Drain 7 Drain 8 Drain.
Absolute Maximum Ratings Ta = 25℃
Parameter Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current Power Dissipation Linear Derating Factor Avalanche Current Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Thermal Resistance.
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SMD Type
N-Channel MOSFET IRF7855 (KRF7855)
■ Features
● VDS (V) = 60V ● ID = 12 A (VGS = 10V) ● RDS(ON) ＜ 9.4mΩ (VGS = 10V)
S
S
S
G
1 2 3 4
SOP-8
AA 8D 7D 6D 5D
+0.040.21 -0.02
MOSFET
1.50 0.15
1 Source 2 Source 3 Source 4 Gate
5 Drain 6 Drain 7 Drain 8 Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current Power Dissipation Linear Derating Factor Avalanche Current Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range
TA=25℃ TA=70℃
TA=25℃
Symbol VDS VGS
ID
IDM PD
IAS EAS dv/dt RthJA RthJC TJ Tstg
Rating 60
±20 12 8.7 97 2.5 0.02 7.2 540 9.
IRF7855 Datasheet
