IRF7807D2 - MOSFET

International Rectifier

IRF7807D2 Datasheet Preview — Preview of IRF7807D2 PDF

Datasheet Details

Part number	IRF7807D2
Manufacturer	International Rectifier ↗
File Size	134.46 KB
Description	MOSFET
Datasheet	IRF7807D2_InternationalRectifier.pdf

IRF7807D2 Product details

Description

The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications.

Features

(Max Values) IRF7807D2 VDS RDS(on) Qg QSW Qoss 30V 25mΩ 14nC 5.2nC 21.6nC Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-Ambient.
RθJA Max. 50 Units °C/W www. irf. com 1 11/8/99 IRF7807D2 Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage.
Static Drain-Source on Resistance.
Drain-Source Leakage Current.
V(BR)DSS RDS(on) 1.0 90 7.2 Min 30 17 25 Typ Max Units V mΩ V µA mA Conditions VGS = 0V, ID = 250µA VGS = 4.5V, I.

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Published: Apr 16, 2005 |