IRF6894MPBF - Power MOSFET

Name: IRF6894MPBF
SKU: IRF6894MPBF-788906

International Rectifier

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Datasheet Details

Part number	IRF6894MPBF
Manufacturer	International Rectifier
File Size	270.73 KB
Description	Power MOSFET
Datasheet	IRF6894MPBF-InternationalRectifier.pdf

IRF6894MPBF Product details

Description

The IRF6894MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile.

Features

.7 VSD, Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 180 160 140 ID, Drain Current (A) Fig 11. Maximum Safe Operating Area 2.5 Typical VGS(th) Gate threshold Voltage (V) 120 100 80 60 40 20 0 25 50 75 100 125 150 TC , Case Temperature (°C) 2.0 ID = 10mA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 1600 EAS , Single Pulse Avalanche Energy (mJ) Fig.

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Published: Apr 1, 2014 |