IRF6898M Datasheet - Infineon

IRF6898M Power MOSFET

The IRF6898MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET™ packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET™ package is compatible with existing layout geometries use.

IRF6898MPbF IRF6898MTRPbF HEXFET® Power MOSFET plus Schottky Diode RoHs Compliant Containing No Lead and Bromide  Typical values (unless otherwise specified) Integrated Monolithic Schottky Diode Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) Dual Sided Cooling Compatible  25V min ±16V max 0.8m@ 10V 1.2m@ 4.5V Low Package Inductance Optimized for High Frequency Switching Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ideal for CPU Core DC-DC Co.

IRF6898M Datasheet (502.48 KB)