IRF6892STRPBF - Power MOSFET

International Rectifier

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Datasheet Details

Part number	IRF6892STRPBF
Manufacturer	International Rectifier
File Size	249.71 KB
Description	Power MOSFET
Datasheet	IRF6892STRPBF-InternationalRectifier.pdf

IRF6892STRPBF Product details

Description

The IRF6892SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile.

Features

°C Single Pulse 0.01 0.01 0.1 1 DC 10 100 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 140 120 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig 11. Maximum Safe Operating Area 2.5 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 1.0mA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 1000 EAS , Single Pulse Avalanche Energy (mJ) F.

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Published: Apr 1, 2014 |