Description
The IRF6893MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile.
Features
- 0
0 25 50 75 100 125 150 TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
1600 1400 1200 1000
Typical VGS(th) Gate threshold Voltage (V)
2.3
2.2
2.1
2.0
1.9 ID = 10mA
1.8
1.7
1.6
1.5
1.4 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID TOP 1.5A
2.2A BOTTOM 23A
800
600
400
200
0 25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
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Fig 14. Maximum Avalanche Energy vs. D.
IRF6893MPbF-InternationalRectifier.pdf