Datasheet Details
| Part number | IRF6612TR1 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 200.07 KB |
| Description | HEXFET Power MOSFET |
| Datasheet |
 IRF6612TR1 Datasheet
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Description
The IRF6612 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
Features
- ry dv/dt - -.
- + RG.
- dv/dt controlled by RG Driver same type as D. U. T. I SD controlled by Duty Factor "D" D. U. T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD.
- VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 16. Gate Charge Waveform www. irf. com 7 I.