IS43R86400E - 512Mb DDR SDRAM

Integrated Silicon Solution

📥 Download Datasheet

IS43R86400E Datasheet Preview — Preview of IS43R86400E PDF

Datasheet Details

Part number	IS43R86400E
Manufacturer	Integrated Silicon Solution
File Size	699.72 KB
Description	512Mb DDR SDRAM
Datasheet	IS43R86400E-IntegratedSiliconSolution.pdf

IS43R86400E Product details

Description

x8 A0-A12 Row Address Input A0-A9, A11 Column Address Input BA0, BA1 Bank Select Address DQ0 DQ7 Data I/O CK, CK System Clock Input CKE Clock Enable CS Chip Select CAS Column Address Strobe Command RAS Row Address Strobe Command WE Write Enable 4 66 VSS 65 DQ7 64 VSSQ 63 NC 62 DQ6 61 VDDQ 60 NC 59 DQ5 58 VSSQ 57 NC 56 DQ4 55 VDDQ 54 NC 53 NC 52 VSSQ 51 DQS 50 NC 49 VREF 48 VSS 47 DM 46 CK 45 CK 44 CKE 43 NC 42 A12 41 A11 40 A9 39 A8 38 A7 37 A6 36 A5 35 A4 34 VSS

Features

VDD and VDDQ: 2.5V ± 0.2V (-5, -6).
VDD and VDDQ: 2.5V ± 0.1V (-4).
SSTL_2 compatible I/O.
Double-data rate architecture; two data transfers per clock cycle.
Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver.
DQS is edge-aligned with data for READs and centre-aligned with data for WRITEs.
Differential clock inputs (CK and CK).
DLL aligns DQ and DQS tran.

📁 IS43R86400E Similar Datasheet

IS43R86400F - 512Mb DDR SDRAM (ISSI)
IS43R83200B - 256Mb DDR Synchronous DRAM (ISSI)
IS43R83200D - DDR SDRAM (ISSI)
IS43R16160B - 256Mb DDR Synchronous DRAM (ISSI)
IS43R16160D - DDR SDRAM (ISSI)
IS43R16320F - 512Mb DDR SDRAM (ISSI)
IS43R16400B - Four internal banks for concurrent operation (ISSI)
IS43R32800D - DDR SDRAM (ISSI)

Other Datasheets by Integrated Silicon Solution

IS43R86400D - 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM
IS43R83200F - 256Mb DDR SDRAM
IS43R16160 - 256Mb Synchronous DRAM
IS43R16160A - 16Meg x 16 256-MBIT DDR SDRAM
IS43R16160F - 256Mb DDR SDRAM
IS43R16320A - 32Meg x 16 512-MBIT DDR SDRAM

Published: Jul 25, 2016 |