IS43R16400B Four internal banks for concurrent operation

ISSI

IS43R16400B Description

IS43R16400B 4Mx16 64Mb DDR SDRAM .
A0-A11 A0-A7 BA0, BA1 DQ0. DQ15 CK, CK CKE CS CAS RAS Row Address Input Column Address Input Bank Select Address Data I/O System Clock Input.

IS43R16400B Features

* VDD and VDDQ: 2.5V ± 0.2V (-5, -6) VDD and VDDQ: 2.6V ± 0.1V (-4) SSTL_2 compatible I/O Double-data rate architecture; two data transfers per clock cycle Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturin

IS43R16400B Applications

* where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance

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Datasheet Details

Part number: IS43R16400B
Manufacturer: ISSI
File Size: 5.70 MB
Datasheet: IS43R16400B_ISSI.pdf
Description: Four internal banks for concurrent operation

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Four internal banks for concurrent operation ISSI

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