IS41LV44002B 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Integrated Silicon Solution

Description

IS41LV44002B 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE .
The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory.

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Datasheet Specifications

Part number: IS41LV44002B
Manufacturer: Integrated Silicon Solution
File Size: 193.78 KB
Datasheet: IS41LV44002B_IntegratedSiliconSolution.pdf
Description: 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Features

* Extended Data-Out (EDO) Page Mode access cycle
* TTL compatible inputs and outputs
* Refresh Interval:
* 2,048 cycles/32 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden Single power supply: 3.3V ± 10% Byt

Applications

* The IS41LV44002B is packaged in a 24-pin 300-mil SOJ and 300-mil TSOP2 with JEDEC standard pinouts. PRODUCT SERIES OVERVIEW Part No. IS41LV44002B Refresh 2K Voltage 3.3V ± 10% KEY TIMING PARAMETERS Parameter RAS Access Time (tRAC) CAS Access Time (tCAC) Column Address Access Time (tAA) EDO Page M

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IS41LV44002B 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE Integrated Silicon Solution

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