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IS41LV4100 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

IS41LV4100 Description

IS41C4100 IS41LV4100 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE .
The ISSI IS41C4100 and IS41LV4100 are 1,048,576 x 4-bit high-performance CMOS Dynamic Random Access Memory.

IS41LV4100 Features

* TTL compatible inputs and outputs
* Refresh Interval: 1024 cycles/16 ms
* Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden
* JEDEC standard pinout
* Single power supply 5V ± 10% (IS41C4100) 3.3V ± 10% (IS41LV4100)
* Industrail Temperature Ra

IS41LV4100 Applications

* The IS41C4100 and IS41LV4100 are available in a 20-pin, 300-mil SOJ package. KEY TIMING PARAMETERS Parameter Max. RAS Access Time (tRAC) Max. CAS Access Time (tCAC) Max. Column Address Access Time (tAA) Min. Fast Page Mode Cycle Time (tPC) Min. Read/Write Cycle Time (tRC) -35 35 10 18 12 60 -60 60

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Datasheet Details

Part number
IS41LV4100
Manufacturer
Integrated Silicon Solution
File Size
179.45 KB
Datasheet
IS41LV4100_IntegratedSiliconSolution.pdf
Description
1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

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1Meg 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE Integrated Silicon Solution
Integrated Silicon Solution IS41LV4100-like datasheet