IS41LV4100 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Integrated Silicon Solution

Description

IS41C4100 IS41LV4100 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE .
The ISSI IS41C4100 and IS41LV4100 are 1,048,576 x 4-bit high-performance CMOS Dynamic Random Access Memory.

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Datasheet Specifications

Part number: IS41LV4100
Manufacturer: Integrated Silicon Solution
File Size: 179.45 KB
Datasheet: IS41LV4100_IntegratedSiliconSolution.pdf
Description: 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Features

* TTL compatible inputs and outputs
* Refresh Interval: 1024 cycles/16 ms
* Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden
* JEDEC standard pinout
* Single power supply 5V ± 10% (IS41C4100) 3.3V ± 10% (IS41LV4100)
* Industrail Temperature Ra

Applications

* The IS41C4100 and IS41LV4100 are available in a 20-pin, 300-mil SOJ package. KEY TIMING PARAMETERS Parameter Max. RAS Access Time (tRAC) Max. CAS Access Time (tCAC) Max. Column Address Access Time (tAA) Min. Fast Page Mode Cycle Time (tPC) Min. Read/Write Cycle Time (tRC) -35 35 10 18 12 60 -60 60

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IS41LV4100 1Meg 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE Integrated Silicon Solution

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