IS41LV16100 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Integrated Silicon Solution

Description

IS41C16100 IS41LV16100 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE .
The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories.

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Datasheet Specifications

Part number: IS41LV16100
Manufacturer: Integrated Silicon Solution
File Size: 207.40 KB
Datasheet: IS41LV16100_IntegratedSiliconSolution.pdf
Description: 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Features

* TTL compatible inputs and outputs; tristate I/O
* Refresh Interval:
* Auto refresh Mode: 1,024 cycles /16 ms
* RAS-Only, CAS-before-RAS (CBR), and Hidden
* Self refresh Mode - 1,024 cycles / 128ms
* JEDEC standard pinout
* Single power supply

Applications

* The IS41C16100 and IS41LV16100 are packaged in a 42-pin 400mil SOJ and 400-mil 50- (44-) pin TSOP (Type II). The lead-free 400mil 50- (44-) option is available too. KEY TIMING PARAMETERS Parameter Max. RAS Access Time (tRAC) Max. CAS Access Time (tCAC) Max. Column Address Access Time (tAA) Min. ED

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IS41LV16100 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE Integrated Silicon Solution

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