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IS41LV16100B 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

IS41LV16100B Description

IS41LV16100B 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE .
The ISSI IS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories.

IS41LV16100B Features

* TTL compatible inputs and outputs; tristate I/O
* Refresh Interval:
* Auto refresh Mode: 1,024 cycles /16 ms
* RAS-Only, CAS-before-RAS (CBR), and Hidden
* JEDEC standard pinout
* Single power supply: 3.3V ± 10%
* Byte Write and Byte Read ope

IS41LV16100B Applications

* The IS41LV16100B is packaged in a 42-pin 400-mil SOJ and 400-mil 50- (44-) pin TSOP (Type II). KEY TIMING PARAMETERS Parameter -50 50 14 25 30 85 -60 60 15 30 40 110 Unit ns ns ns ns ns PIN CONFIGURATIONS 50(44)-Pin TSOP (Type II) 42-Pin SOJ Max. RAS Access Time (tRAC) Max. CAS Access Time (tCAC

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Datasheet Details

Part number
IS41LV16100B
Manufacturer
Integrated Silicon Solution
File Size
180.45 KB
Datasheet
IS41LV16100B_IntegratedSiliconSolution.pdf
Description
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

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16-MBIT DYNAMIC RAM WITH EDO PAGE MODE Integrated Silicon Solution
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