IS41LV16256B 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Integrated Silicon Solution

Description

IS41LV16256B 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE .
The ISSI IS41LV16256B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory.

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Datasheet Specifications

Part number: IS41LV16256B
Manufacturer: Integrated Silicon Solution
File Size: 182.62 KB
Datasheet: IS41LV16256B_IntegratedSiliconSolution.pdf
Description: 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Features

* TTL compatible inputs and outputs
* Refresh Interval: 512 cycles/8 ms
* Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden
* JEDEC standard pinout
* Single power supply: 3.3V ± 10%
* Byte Write and Byte Read operation via two CAS
* Lea

Applications

* The IS41LV16256B is packaged in 40-pin 400-mil SOJ and TSOP (Type II). -35 35 11 18 14 60 -60 60 15 30 25 110 Unit ns ns ns ns ns KEY TIMING PARAMETERS Parameter Max. RAS Access Time (tRAC) Max. CAS Access Time (tCAC) Max. Column Address Access Time (tAA) Min. EDO Page Mode Cycle Time (tPC) Min. R

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IS41LV16256B 256K 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE Integrated Silicon Solution

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