IDT7MMV4101 Datasheet (Integrated Device) - 128K x 24 Three Megabit 3.3V CMOS Static RAM

IDT7MMV4101, 128K x 24 Three Megabit 3.3V CMOS Static RAM

The IDT7MMV4101 is a three megabit static RAM constructed on an multilayer laminate substrate using three 3.3V, 128K x 8 (IDT71V124) static RAMS encapsulated in a Ball Grid Array (BGA).

The IDT7MMV4101 is packaged in a plastic BGA.

The BGA configuration allows 119 leads to be placed on a package 14m

IDT7MMV4101 Features

* High density 3 megabit 3.3V static RAM Low profile 119 lead, 14mm x 22mm BGA (Ball Grid Array) Fast RAM access times: 10,12,15ns Single 3.3V power supply Multiple Vcc & GND pins for maximum noise immunity Inputs/outputs directly LVTTL compatible Commercial (0O C to +70O C) Industrial (-40O C to +85O