PTFC262157FH - Thermally-Enhanced High Power RF LDMOS FET

Infineon

Datasheet Details

Part number	PTFC262157FH
Manufacturer	Infineon
File Size	352.25 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFC262157FH-Infineon.pdf

The PTFC262157FH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band.

include a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFC262157FH Package H-34288G-4/2 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1200 mA, ƒ = 2620 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW 21 50 20 40 19 30 18 Gain 17 16 32 Efficiency 36 40 44 48 Output Power (dBm) 20 10 c262157sh-gr1 52 0.

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Published: Nov 27, 2016 |