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PTF080451 - LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz

Description

The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band.

Full gold metallization ensures excellent device lifetime and reliability.

Features

  • Broadband internal matching Typical EDGE performance - Average output power = 22.5 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P.
  • 1dB = 60 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 450 mA, f = 959.8 MHz 0 Efficiency 55 50 45.

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Datasheet Details

Part number PTF080451
Manufacturer Infineon Technologies AG
File Size 158.52 KB
Description LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
Datasheet download datasheet PTF080451 Datasheet

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Other Datasheets by Infineon Technologies AG

Part Number Description
PTF080451E LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
PTF080101 LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ
PTF080101S LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ
PTF080601 LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
PTF080601A LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz

Full PDF Text Transcription

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PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • • Broadband internal matching Typical EDGE performance - Average output power = 22.5 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P–1dB = 60 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 450 mA, f = 959.
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