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IRF150P221 - MOSFET

Description

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Features

  • Very low RDS(on).
  • Excellent gate charge x RDS(on) (FOM).
  • Optimized Qrr.
  • 175°C operating temperature.
  • Product validation according to JEDEC standard.
  • Optimized for broadest availability from distribution partners Benefits.
  • Reduced conduction losses.
  • Ideal for high switching frequency.
  • Lower overshoot voltage.
  • Increased reliability versus 150°C rated parts.
  • Halogen-free according to IEC61249-2-21 T.

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Full PDF Text Transcription

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IRF150P221 MOSFET StrongIRFETª Features •VerylowRDS(on) •ExcellentgatechargexRDS(on)(FOM) •OptimizedQrr •175°Coperatingtemperature •ProductvalidationaccordingtoJEDECstandard •Optimizedforbroadestavailabilityfromdistributionpartners Benefits •Reducedconductionlosses •Idealforhighswitchingfrequency •Lowerovershootvoltage •Increasedreliabilityversus150°Cratedparts •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 150 V RDS(on),typ 3.6 mΩ RDS(on),max 4.5 mΩ ID(SiliconLimited) 186 A QG(0V..10V) 80 nC PG-TO247-3 1 2 3 Gate Pin 1 Drain Pin 2 Source Pin 3 Type/OrderingCode IRF150P221 Package PG-TO247-3 Marking IRF150P221 RelatedLinks - Final Data Sheet 1 Rev.2.
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