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IPB035N10NF2S Final datasheet
MOSFET
StrongIRFET™ 2 Power‑Transistor, 100 V
Features
• Optimized for a wide range of applications • N‑channel, normal level • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21
Product validation
Qualified according to JEDEC Standard
Table 1 Parameter VDS RDS(on),max ID Qoss QG
Key performance parameters
Value
Unit
100
V
3.5
mΩ
151
A
89
nC
69
nC
D²PAK
tab
2 1
3
32 1
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Part number IPB035N10NF2S
Package PG‑TO263‑3
Marking 035N10NS
Related links ‑
Datasheet
https://www.infineon.com
1
Revision 1.0 2025‑01‑20
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StrongIRFET™ 2 Power‑Transistor, 100 V
IPB035N10NF2S
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Description . . . . . . . . . . . . . . . . . . . .
IPB035N10NF2S Datasheet
