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IDW24G65C5B Silicon Carbide Diode

IDW24G65C5B Description

SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDW24G65C5B Final Datasheet Rev.2.0, 2015-04-13 Power Management & Multimar.
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

IDW24G65C5B Features

* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Temperature independent switching behavior
* High surge current capability
* Pb-free lead plating; RoHS compliant
* Qualified according to

IDW24G65C5B Applications

* Breakdown voltage tested at 9 mA2)3)
* Optimized for high temperature operation Benefits
* System efficiency improvement over Si diodes
* System cost / size savings due to reduced cooling requirements
* Enabling higher frequency / increased power density solutions
* Higher

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Silicon Carbide Diode Infineon
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