IDW30G65C5 SiC Schottky Barrier diodes

Infineon Technologies

Description

SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDW30G65C5 Final Datasheet Rev.2.2, 2013-01-15 Power Management & Multimark.
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

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Datasheet Specifications

Part number: IDW30G65C5
Manufacturer: Infineon ↗ Technologies
File Size: 1.14 MB
Datasheet: IDW30G65C5_InfineonTechnologies.pdf
Description: SiC Schottky Barrier diodes

Features

* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Temperature independent switching behavior
* High surge current capability
* Pb-free lead plating; RoHS compliant
* Qualified according to

Applications

* Breakdown voltage tested at 66 mA2)
* Optimized for high temperature operation Benefits
* System efficiency improvement over Si diodes
* System cost / size savings due to reduced cooling requirements
* Enabling higher frequency / increased power density solutions
* Higher s

IDW30G65C5 Distributors

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IDW30G65C5 SiC Schottky Barrier diodes Infineon Technologies

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