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IDW10G120C5B Silicon Carbide Schottky Diode

IDW10G120C5B Description

Silicon Carbide Schottky Diode IDW10G120C5B 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Final Datasheet Rev.2.1 2017-07-21 Industrial Power Con.
2 Table of Contents3 Maximum Ratings 4 Thermal Resistances 4 Electrical Characteristics5 Electrical Characteristics Diagram 5 Package Drawings 9 Revis.

IDW10G120C5B Features

* Revolutionary semiconductor material - Silicon Carbide
* No reverse recovery current / No forward recovery
* Temperature independent switching behavior
* Low forward voltage even at high operating temperature
* Tight forward voltage distribution
* Excellent thermal perform

IDW10G120C5B Applications

* Pb-free lead plating; RoHS compliant 1 2 CASE 3 Benefits
* System efficiency improvement over Si diodes
* Enabling higher frequency / increased power density solutions
* System size/cost savings due to reduced heatsink requirements and smaller magnetics
* Reduced EMI

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Silicon Carbide Schottky Diode Infineon
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