IDW10G120C5B Silicon Carbide Schottky Diode

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Description

Silicon Carbide Schottky Diode IDW10G120C5B 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Final Datasheet Rev.2.1 2017-07-21 Industrial Power Con.
2 Table of Contents3 Maximum Ratings 4 Thermal Resistances 4 Electrical Characteristics5 Electrical Characteristics Diagram 5 Package Drawings 9 Revis.

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Datasheet Specifications

Part number: IDW10G120C5B
Manufacturer: Infineon ↗
File Size: 835.31 KB
Datasheet: IDW10G120C5B-Infineon.pdf
Description: Silicon Carbide Schottky Diode

Features

* Revolutionary semiconductor material - Silicon Carbide
* No reverse recovery current / No forward recovery
* Temperature independent switching behavior
* Low forward voltage even at high operating temperature
* Tight forward voltage distribution
* Excellent thermal perform

Applications

* Pb-free lead plating; RoHS compliant 1 2 CASE 3 Benefits
* System efficiency improvement over Si diodes
* Enabling higher frequency / increased power density solutions
* System size/cost savings due to reduced heatsink requirements and smaller magnetics
* Reduced EMI

IDW10G120C5B Distributors

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IDW10G120C5B Silicon Carbide Schottky Diode Infineon

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