Datasheet4U Logo Datasheet4U.com

IDW10G65C5 SiC Schottky Barrier diodes

IDW10G65C5 Description

SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDW10G65C5 Final Datasheet Rev.2.2, 2013-01-15 Power Management & Multimark.
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

IDW10G65C5 Features

* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Temperature independent switching behavior
* High surge current capability
* Pb-free lead plating; RoHS compliant
* Qualified according to

IDW10G65C5 Applications

* Breakdown voltage tested at 22 mA2)
* Optimized for high temperature operation Benefits
* System efficiency improvement over Si diodes
* System cost / size savings due to reduced cooling requirements
* Enabling higher frequency / increased power density solutions
* Higher s

📥 Download Datasheet

Preview of IDW10G65C5 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

📌 All Tags

SiC Schottky Barrier diodes Infineon Technologies
Infineon Technologies IDW10G65C5-like datasheet