Description
AUTOMOTIVE GRADE AUIRGB4062D1 AUIRGS4062D1 AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .
Features
* Low VCE (on) Trench IGBT Technology
* Low Switching Losses
* 5µs short circuit SOA
* Square RBSOA
* 100% of the parts tested for ILM
* Positive VCE (on) Temperature Coefficient.
* Ultra Fast Soft Recovery Co-pak Diode
* Tighter Distribution of Parameters
* Lead
Applications
* Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
* Rugged Transient Performance for Increased Reliability
* Excellent Current Sharing in Parallel Operation
* Low EMI
E C G
CE G
AUIRGB4062D1 AUIRGS4062D1
TO-220AB
D2Pak
G Gate
C C