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AUIRGP4062D-E, AUIRGP4062D INSULATED GATE BIPOLAR TRANSISTOR

AUIRGP4062D-E Description

AUTOMOTIVE GRADE AUIRGP4062D AUIRGP4062D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

AUIRGP4062D-E Features

* Low VCE (on) Trench IGBT Technology
* Low Switching Losses
* 5µs SCSOA
* Square RBSOA
* 100% of The Parts Tested for ILM
* Positive VCE (on) Temperature Coefficient.
* Ultra Fast Soft Recovery Co-pak Diode
* Tighter Distribution of Parameters
* Lead-Free, RoHS

AUIRGP4062D-E Applications

* Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
* Rugged Transient Performance for Increased Reliability
* Excellent Current Sharing in Parallel Operation
* Low EMI GC E TO-247AC AUIRGP4062D GC E TO-247AD AUIRGP4062D-E G Gate C Co

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: AUIRGP4062D-E, AUIRGP4062D. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
AUIRGP4062D-E, AUIRGP4062D
Manufacturer
Infineon ↗
File Size
554.63 KB
Datasheet
AUIRGP4062D-Infineon.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: AUIRGP4062D-E, AUIRGP4062D.
Please refer to the document for exact specifications by model.

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INSULATED GATE BIPOLAR TRANSISTOR Infineon
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