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AUIRGP4062D - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Low VCE (on) Trench IGBT Technology.
  • Low Switching Losses.
  • 5µs SCSOA.
  • Square RBSOA.
  • 100% of The Parts Tested for ILM.
  • Positive VCE (on) Temperature Coefficient.
  • Ultra Fast Soft Recovery Co-pak Diode.
  • Tighter Distribution of Parameters.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  • C G E n-channel C VCES = 600V IC = 24A, TC = 100°C tSC 5µs, TJ(max) = 175°C VCE(on) typ. = 1.60V C Benefits.
  • High Efficiency in a Wide Range of App.

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Datasheet Details

Part number AUIRGP4062D
Manufacturer Infineon
File Size 554.63 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet AUIRGP4062D Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AUTOMOTIVE GRADE AUIRGP4062D AUIRGP4062D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features  Low VCE (on) Trench IGBT Technology  Low Switching Losses  5µs SCSOA  Square RBSOA  100% of The Parts Tested for ILM  Positive VCE (on) Temperature Coefficient.  Ultra Fast Soft Recovery Co-pak Diode  Tighter Distribution of Parameters  Lead-Free, RoHS Compliant  Automotive Qualified * C G E n-channel C VCES = 600V IC = 24A, TC = 100°C tSC 5µs, TJ(max) = 175°C VCE(on) typ. = 1.
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