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AUIRG4PC40S-E - Insulated Gate Bipolar Transistor

Features

  • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz).
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
  • Industry standard TO-247AD package.
  • Lead-Free.
  • Automotive Qualified.
  • C G E n-channel C AUIRG4PC40S-E VCES = 600V VCE(ON) typ. = 1.32V @ VGE = 15V, IC = 31A Benefits.
  • Generation 4 IGBT's offer highest efficiency available.
  • IGBT's optimized for specified applic.

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AUTOMOTIVE GRADE Insulated Gate Bipolar Transistor Features  Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)  Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3  Industry standard TO-247AD package  Lead-Free  Automotive Qualified* C G E n-channel C AUIRG4PC40S-E VCES = 600V VCE(ON) typ. = 1.
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