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2ED2388S06F - 650V half bridge gate driver

Infineon

The 2ED2388S06F by Infineon is a 650V half bridge gate driver. Below is the official datasheet preview.

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2ED2388S06F 650V half bridge gate driver by Infineon - Datasheet Preview — Official preview page of the 2ED2388S06F 650V half bridge gate driver datasheet (Infineon).

Datasheet Details

Part number	2ED2388S06F
Manufacturer	Infineon
File Size	759.86 KB
Description	650V half bridge gate driver
Datasheet	2ED2388S06F-Infineon.pdf
Additional preview pages of the 2ED2388S06F datasheet.

2ED2388S06F Product details

Description

The 2ED2388S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

Features

Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology.
Negative VS transient immunity of -100 V.
Floating channel designed for bootstrap operation.
Operating voltages (VS node) upto + 650 V.
Maximum bootstrap voltage (VB node) of + 675 V.
Integrated ultra-fast, low resistance bootstrap diode.
100 ns dead-time with integrated shoot-through prevention logic.
Logic operational up to.
11 V on VS Pin.

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Published: May 20, 2025 |