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SIGC42T120CS2 - IGBT

Description

Eupec FP25R12KS4C AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologie

Features

  • 1200V NPT technology 175µm chip.
  • low turn-off losses.
  • short tail current.
  • positive temperature coefficient.
  • easy paralleling This chip is used for:.
  • IGBT Modules.

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www.DataSheet4U.com SIGC42T120CS2 IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling This chip is used for: • IGBT Modules Applications: • drives, SMPS, resonant applications C G E Chip Type SIGC42T120CS2 VCE 1200V ICn 25A Die Size 6.59 x 6.49 mm2 Package sawn on foil Ordering Code Q67050A4338-A101 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 6.59 x 6.49 2 x (2.18 x 1.58) 1.06 x 0.65 42.8 / 33.
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