Datasheet4U Logo Datasheet4U.com

SIGC42T170R3 - IGBT

Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights

Features

  • 1700V Trench + Field Stop technology.
  • low turn-off losses.
  • short tail current.
  • positive temperature coefficient.
  • easy paralleling 3 This chip is used for:.
  • power module C.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SIGC42T170R3GE IGBT Infineon
SIGC42T60SNC IGBT Infineon
SIGC42T60UN IGBT Infineon
SIGC40T60R3E IGBT Infineon
SIGC40T65R3E IGBT Infineon

Other Datasheets by Infineon

Part Number Description
SIGC42T170R3GG IGBT
SIGC42T170R2C IGBT
SIGC42T120C IGBT
SIGC42T120CL IGBT
SIGC42T120CQ IGBT

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com SIGC42T170R3 IGBT Chip FEATURES: • 1700V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC42T170R3 VCE 1700V ICn 29A Die Size 6.5 x 6.46 mm2 Package sawn on foil Ordering Code Q67050A4151-A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 6.5 x 6.46 4.27 x 4.27 1.18 x 1.09 42 / 28.
Published: |